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Interfacial structure of anodically oxidized Hg(1-x) Cd(x) Te

Struktur der Phasengrenze zwischen Hg(1-x) Cd(x) Te und seinem anodischen Eigenoxid
 
: Richter, H.J.; Seelmann-Eggebert, M.

Engstroem, O.:
18th International Conference on the Physics of Semiconductors 1986
Singapore: World Scientific, 1987
ISBN: 9971-5-0197-X
S.283-286 : Abb.
International Conference on the Physics of Semiconductors <18, 1986, Stockholm>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
Anodisches Eigenoxid; Chemische Phasengrenzstruktur; Passivierung; Quecksilber-Tellurid; Röntgen-Photoelektronen-Spektroskopie; Voltametrie

Abstract
The formation of the compositional structure at the interface between Hgsub1minusxCdsubxTe(MCT) and its common anodic oxide was investigated by electrochemical and XPS analyses. It was found that a bi-modal oxidation behaviour of MCT causes each of both interface regions (oxide and MCT) to deviate in its composition from the respective bulk.

: http://publica.fraunhofer.de/dokumente/PX-19677.html