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Interaction coupled cyclotron transitions of two-dimensional electron systems in GaAs at high temperatures

Wechselwirkungsgekoppelte Zyklotron-Übergäng eines zweidimensionalen Elektronengas Systems in GaAs bei hohen Temperaturen
: Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.


Physical review letters 75 (1995), Nr.5, S.918-921 : Abb.,Lit.
ISSN: 0031-9007
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; quantum wells; two-dimensional electrongas; zweidimensionales Elektronengas

We report here the first observation of the cyclotron resonance Landau splitting for low density electron inversion layers in Alx Ga1-x As-GaAs heterojunctions. Even at temperatures close to 100 K electron-electron interactions couple the electrical dipole transitions from the ground and first excited Landau levels, with a coupling strength comparable to the one found at liquid helium temperatures. The experiment can be explained only in a single-particle approximation at sufficiently low densities and/or magnetic field strengths where the resonant polaron effect is important.