Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Integrated three-dimensional topography simulation of contact hole processing

Integrierte dreidimensionale Topographiesimulation von Kontaktlochprozessierung
: Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.

Massoud, H.Z.; Claeys, C.; Fair, R.B. ; Electrochemical Society -ECS-, Electronics Division:
ULSI science and technology 1997. Proceedings of the Sixth International Symposium on Ultra Large Scale Integration Science and Technology
Pennington, NJ: ECS, 1997 (Electrochemical Society. Proceedings 97-3)
ISBN: 1-566-77130-7
International Symposium on Ultra Large Scale Integration (ULSI) Science and Technology <6, 1997, Montreal>
Fraunhofer IIS B ( IISB) ()
Fraunhofer ISIT ()
Ätzen; contact hole; deposition; etching; Halbleitertechnologie; Kontaktloch; Lithographie; lithography; process simulation; Prozeßsimulation; Schichtabscheidung; semiconductor technology; Topographiesimulation; topography simulation

A software package for the three-dimensional simulation of topography processes which has been developed within the European project PROMPT is described. The software is capable of simulating lithography, dry-etching and layer deposition processes. The individual modules have been integrated into a unified environment, thus allowing simulation of complete topography process sequences. As an example, a complete simulation consisting of lithography, dry-etching, and sputter deposition steps to open and fill a contact hole is shown. The simulation result is in good agreement with the experiment, i.e. a scanning electron microscopy image of the contact hole cross section.