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Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

Infrarotspektren und Elektronen Spin Resonanz von tiefen Vanadium Störstellen in Siliziumkarbid
 

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Applied Physics Letters 56 (1990), Nr.12, S.1184-1186 : Abb.,Tab.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
blaue Leuchtdiode; blue emitting diode; electron spin resonance; infrared spectroscopy; Infrarot Spektroskopie; Minoritätsträger Lebensdauer; minority carrier lifetime; silicon carbide; Siliziumkarbid

Abstract
Trace impurities of vanadium in Lely-grown silicon carbide single crystals have been detected by their strong, polytype-specific photoluminescence in the 1.3-1.5 mym near-infrared spectral rang, as well as by infrared absorption. A high 0/A high-, and possibly also as a deep donor. The role of vanadium as minority-carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data.

: http://publica.fraunhofer.de/dokumente/PX-18748.html