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Infrared investigation of persistent electrons in undoped semi-insulating GaAs, photogenerated during EL2 bleaching at 10 K

Chapter 2
Infrarot Untersuchung an persistenten Elektronen in undotiertem semi-isolierendem GaAs, photogeneriert während des EL2 Bleichens bei 10 K
: Fuchs, F.; Dischler, B.

5th Conference on Semi-Insulating III-V Materials '88. Proceedings
IOP Publishing, 1988
S.139-144 : Abb.,Lit.
Conference on Semi-Insulating III-V Materials <5, 1988, Malmö>
Fraunhofer IAF ()
Bleichen; EL2; Elektron(persistent); GaAs; Infrarot

Using infrared spectroscopy the photoexcitation of free carriers with sub bandgap monochromatic light is investigated. The results are interpreted in terms of photoionization and carrier trapping at the EL2 center and two additional centers. The microscopic nature of the additional centers is not known. Similarities of the present spectral response with results obtained in other experiments are pointed out. (IAF)