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Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1-XEuXSe.

Infrarot-Doppelheterostruktur-Diodenlaser aus Pb1-XEuXSe, das mit Molekularstrahlepitaxie hergestellt wurde
: Norton, P.R.; Böttner, H.; Lambrecht, A.; Spanger, B.; Tacke, M.


Applied Physics Letters 53 (1988), Nr.23, S.2260-2262 : Abb.,Lit.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer IPM ()
Bleisalzlaser; Diodenlaser; Heterostruktur; Infrarot; Molekularstrahlepitaxie; PbEuSe

Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of PbEuSe. This IV-VI ternary has a small lattice variation within the IR band-gap range. Double-heterostructure lasers with PbSe active layers were operated up to T = 174 K cw and 220 K pulsed mode; they reached the highest cw operation temperature reported for this type of laser in the mid IR. Their tuning range was 7.8 - 5.7 mym cw. Lasers with the ternary as the active layer were operated up to the shortest wavelength of 2.88 mym at 100 K cw. At present lasers made by molecular beam epitaxy of this material cover the widest wavelength region at T bigger than 77 K around 5 mym in cw operation. (IPM)