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Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.

Einfluß der BaF2 Substratpräparation auf die strukturelle Perfektion von epitaktisch gewachsenen IV-VI-Verbindungen
: Clemens, H.; Voiticek, A.; Holzinger, A.; Bauer, G.


Journal of Crystal Growth 102 (1990), S.933-938 : Abb.,Lit.
ISSN: 0022-0248
Fraunhofer IPM ()
BaF2; epitaxy; Halbleiter; IV-VI compound; IV-VI-Verbindung; molecular beam; Molekularstrahlepitaxie; semiconductor

The influence of preheating time and temperature of (111) oriented BaF2 substrates on the crystalline epitaxial perfection of 4 - 6 film growth is investigated by in situ reflection high energy electron diffraction, and after growth, by X-ray diffraction and electron channelling patterns. A preheating temperature of 500 degree C for 10 min yields excellent epitaxial film relation ship and perfect overgrowth.