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Influence of RTP on Vacancy Concentrations

Einfluss von Schnellheizprozessen auf die Konzentration von Gitterleerstellen
: Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.

Dunham, S.T.; Nelson, J.S.:
Semiconductor process and device performance modelling
Warrendale, Pa.: Materials Research Society, 1998
ISBN: 1-55899-395-9
Aufsatz in Buch
Fraunhofer IIS B ( IISB) ()
Gitterleerstellen; nitridation; oxidation; Platin; RTP; silicium

The increase and reduction of the vacancy concentration by rapid thermal processing (RTP) was investigated by platinum diffusion. Direct experimental evidence is presented for the consumption of vacancies during oxidation and for the introduction of vacancies during processing in ammonia and nitrogen. These results confirm the indirect conclusions from dopant diffusion and from the growth and shrinkage of extended defects. In addition, it was possible to establish an upper limit for the equilibrium concentration of vacancies at 1180 deg C which is lower than previously reported values.