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The influence of oxide thickness on the passivation of high efficiency silicon solar cells

 
: Kopp, J.; Knobloch, J.; Wettling, W.

Guimaraes, L.; Palz, W.; Reyff, C. de; Kiess, H.; Helm, P.:
Eleventh E.C. Photovoltaic Solar Energy Conference '92. Proceedings : International conference, held at Montreux, Switzerland, 12 - 16 October 1992
Chur: Harwood Academic Publishers, 1993 (EUR 14811/EN)
ISBN: 3-7186-5380-X
S.49-52
Photovoltaic Solar Energy Conference <11, 1992, Montreux>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()
antireflection coating; dünnes Oxid; e-gun damage; high efficiency; Passivierung; surface recombination velocity

Abstract
By comparison of simultaneously processed solar cells, bifacial cells and contactless photoconductivity decay (PCD) test wafers the effect of varying oxide thickness (14nm - 80nm) on the passivation of the emitter and rear surface of silicon wafers with different surface morphology is investigated. No significant difference of electrical passivation for all oxide thicknesses under all tested surface conditions is observed. A decrease of the oxide quality due to enhanced interface trap density is detected after e-beam evaporation but can be completely removed with a forming gas anneal at a temperature of 450 degree C. Furthermore spectral response measurements of a 20.9 % efficient silicon solar cell (texturized + 105nm SiO2-layer) is compared with a test solar cell (texturized + 14nm SiO2- + 53nm TiO2-layer). The results confirm the good electrical passivating capability of thin SiO2-layers, also when used with an additional antireflection coating.

: http://publica.fraunhofer.de/dokumente/PX-18466.html