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The influence of local thermomechanical stress on grain growth in thin Al-1 per cent Si layers on SiO2/Si substrates

: Gerth, D.; Katzer, D.; Schwarzer, R.A.


Physica status solidi. A 146 (1994), S.299-316
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer IWM ()

Grain growth is studied during the thermal treatment of thin aluminium alloy layers on oxidised silicon substrates by means of transmission electron microscopy. The grain -specific texture of annealed layers is determined on-line by the Kikuchi pattern method. Elastic coefficients such as stress and strains in reference directions in the layer, elastic energy and resolved shear stress on the glide planes are calculated in a first approximation on the basis of biaxial stress model and a biaxial strain model considering measured grain orientations. The mechanisms of stress relaxation, some driving forces, and the effects on grain growth are discussed. Local inhomogeneities, particulary of the resolved shear stress, have an effect on grain growth. The conclusion glide during grain growth. The results are illustrated by grey-level maps of the grain structure.