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The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.

Einfluß von Implantationsparametern und Temperbedingungen auf die Eigenschaften von MoSi2-Schichten
: Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G.

Hennig, K.:
EPM '87. Energy Pulse and Particle Beam Modification of Materials
Berlin/West: Akademie-Verlag, 1987 (Physical Research 8)
S.327 ff
Aufsatz in Buch
Fraunhofer IIS B ( IISB) ()
Halbleitertechnologie; Ionenimplantation; Ionenstrahlmischen; silicide

MoSi2 layers were fabricated by ion-beam mixing and subsequent annealing. The mixing was performed by arsenic ion, which is advantageous because the same process step can be used for silicidation and for doping of the underlying layer. The temperature during implantation was varied and various implantation energies (140-200 keV) were used in order to determine the effect of these parameters on the silicidation reaction. While the thickness of the silicide formed is proportional to dose and strongly dependent on implantation temperatur, implantation energy is relatively unimportant in the energy range investigated. The results are in good agreement with dynamic Monte Carlo simulation of the mixing process. (AIS-B)