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Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.

Einfluss der Gamma-L und Gamma-X Überschneidung auf stimulierte Emission in AlxGa1-xAs
: Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.

Applied physics. A 53 (1991), S.198-202 : Abb.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; photoluminescence; Photolumineszenz; stimulated emission; stimulierte Emission

The dependence of the bandstructure and the resulting dependences of the intensity and the wavelength of stimulated emission on the carrier density are demonstrated in optically excited AlxGa1-xAs near the crossover composition xc at room temperature. Density induced Gamma to L and Gamma to X crossings, based on the large band-gap renormalization near the crossover composition, are observed in samples with an AlAs mole fraction x equal 0.43 and x equal 0.46. The band crossings are indicated by strong fluctuations of the intensity and the wavelength of stimulated emission. This behavior is quantitatively well explained by using a multi-valley model for the description of the band-gap renormalization. The multi-valley model leads to an exact density-dependent prediction of the wavelength and to an estimation of the intensity of stimulated emission in indirect band-gap AlxGa1-xAs and shows the optimum AlAs mole fraction for semiconductor laser application.