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Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers

Einfluss der Spiegelreflektivität auf den differentiellen Gewinn und K-Faktor in Hochgeschwindigkeits-GaAs/AlGaAs und InGaAs/GaAs -MQW- Lasern
 

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Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting '92. Technical Digest
New York/N.Y.; Piscataway/N.J., 1992
ISBN: 0-7803-0817-4
S.863-866 : Abb.,Lit.
International Electron Devices Meeting <1992, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
dielectric mirror coating; dielektrische Spiegelbeschichtung; Halbleiterlaserdiode; high-frequency direct modulation; Hochfrequenzdirektmodulation; quantum well lasers; relative intensity noise; relatives Intensitätsrauschen; semiconductor laser

Abstract
The intrinsic modulation response of semiconductor lasers is dependent on the differential gain, which determines the relaxation frequency for a given current density, and the damping factor, K, which limits the ultimate 3-dB bandwidth. We investigated the dependence of both parameters in GaAs/AlGaAs and pseudomorphic InsubyGasub1minusyAs/GaAs multiple-quantum-well lasers on the threshold gain by measuring the relative intensity noise power spectra of lasers with different facet reflectivities and cavity lengths.

: http://publica.fraunhofer.de/dokumente/PX-18405.html