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1994
Conference Paper
Titel
Influence of annealing on electron lifetimes in transistor base-layers on GaAs-C
Alternative
Einfluß des Temperns auf die Lebensdauer von Elektronen in GaAs-C-Epitaxieschichten
Abstract
The minority carrier lifetimes in heavily p-doped GaAs epitaxial layers for the bases of heterobipolar transistors are investigated by time-resolved photoluminescence. The samples are grown with carbon dopings from 4 x 10 high 18 to 1.5 x 10 high 20 cm high -3. A post-growth annealing process at 600 degree Celsius for 10 min guarantees activation of carbon as an acceptor to more than 90 percent. The electron lifetimes of annealed samples are comparable with the lifetimes of as-grown samples with same free hole densities. The lifetimes are limited by Auger recombination at densities higher than 5 x 10 high 19 cm high -3.