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Indirect stimulated emission at room temperature in the visible range.

Indirekte stimulierte Emission bei Zimmertemperatur im sichtbaren Bereich
: Bauser, E.; Kalt, H.; Köhler, K.; Lu, Y.-C.; Rinker, M.

Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physical concepts of materials for novel optoelectronic device applications. Vol. 2: Device physics and applications
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1362)
ISBN: 0-8194-0423-3
International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications <1990, Aachen>
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; photoluminescence; stimulated emission; stimulierte Emission

Stimulated emission in indirect band-gap Al sub X Ga sub 1-X As is observed at room temperature. This indirect stimulated emission is based on alloy-disorder induced zero-phonon band-to-band transitions. A quadratic dependence of the threshold pump intensity on the erergy separation of the renormalized direct and indirect conduction bands is found. These threshold excitation intensities show a weak exponential increase with lattice temperature. The emmission wavelength and the emission intensity close to the crossover composition are strongly influenced by band-gap renormalization, which is treated in a multi-valley model. This model quantitatively explains the enhanced gap shrinkage in direct-gap AlGaAs close to the crossover composition.