Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.

Einbau von Silizium in -311-A und -111-A GaAs hergestellt mit Molekular-Strahl-Epitaxie
 

:

Materials Science Forum 143-147 (1994), S.259-264 : Abb.,Lit.
ISSN: 0255-5476
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
-111-A GaAs; -311-A GaAs; LVM Raman spectroscopy; LVM-Ramanspektroskopie; Si doped MBE GaAs; Si-dotiertes MBE GaAs

Abstract
The incorporation of silicon into GaAs grown by molecular beam epitaxy on Ga-terminated (311)A and (111)A surfaces has been investigated by local vibrational mode (LVM) Raman and absorption spectroscopy as well as by photoluminescence measurements. Both n- and p-type GaAs:Si layers grown on (311)A substrates show intense band edge luminescence and n-type samples also show very weak deep level emission due to SisubGa-VsubGa defect complexes. The low-temperature Raman spectrum of n-type (311)A GaAs:Si shows the LVM of high28 SisubGa donors and of compensating high28 SisubAs acceptors as peaks at the expected frequencies of 384 and 399 cmhigh-1, respectively. However, in p-type (311)A and (111)A layers only one silicon related LVM appears at 395 cmhigh-1. Similarly, in FTIR absorption a Fano profile is resolved at this frequency. The incorporation of silicon into GaAs grown by molecular beam epitaxy on Ga-terminated (311)A and (111)A surfaces has been investigated by local vibrational mod e (LVM) Raman and absorption spectroscopy as well as by photoluminescence measurements. Both n- and p-type GaAs:Si layers grown on (311)A substrates show intense band edge luminescence and n-type samples also show very weak deep level emission due to SisubGa-VsubGa defect complexes. The low-temperature Raman spectrum of n-type (311)A GaAs:Si shows the LVM of high28 SisubGa donors and of compensating high28 SisubAs acceptors as peaks at the expected frequencies of 384 and 399 cmhigh-1, respectively. However, in p-type (311)A and (111)A layers only one silicon related LVM appears at 395 cmhigh-1. Similarly, in FTIR absorption a Fano profile is resolved at this frequency.

: http://publica.fraunhofer.de/dokumente/PX-18133.html