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Incorporation of Be into InxGa1-xAs /0.004 equal or smaller than x equal or smaller than 0.17/ studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes.

Untersuchung des Einbaues von Be in InxGa1-xAs /0.004 gleich oder kleiner als x gleich oder kleiner als 0.17/ mittels Photolumineszenzspektroskopie und resonanter Ramanstreuung an lokalisierten Schwingungsmoden
: Alvarez, A.L.; Wagner, J.; Calle, F.; Maier, M.; Gutierrez, G.; Sacedon, A.; Calleja, E.; Munoz, E.


Materials Science Forum 143-147 (1994), S.241-246 : Abb.,Tab.,Lit.
ISSN: 0255-5476
Fraunhofer IAF ()
Be-doped InxGa1-xAs; Be-dotiertes InxGa1-xAs; local vibrational modes; lokalisierter Schwingungsmode; photoluminescence; Photolumineszenzspektroskopie; spectroscopy

A set of Be doped Insubx Gasub1-x As samples with x equal or smaller than 0.17 and (Be) equal or bigger than 2 * 10(exp)19 cm-3 has been grown in order to study the incorporation of this dopant into a ternary host lattice. Secondary ion mass spectroscopy, double-crystal X-ray diffraction and Hall effect have been used to characterize the samples. Low temperature (T about 15 K) photoluminescence spectra show a broad emission line arising from the recombination of a highly degenerated hole gas. Resonant Raman spectroscopy of local vibrational modes provides information on the alloy disorder in the nearest environment of the impurity. The splitting of the Be LVM peak due to the influence of the In second neighbors is observed as a broadening of the peak, which also shifts to lower energies with increasing indium content as expected from a simple approximation.