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In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems

: Möller, H.; Böbel, F.G.; Hertel, B.; Lindenberg, T.; Ritter, G.


Journal of Crystal Growth 157 (1995), S.327-332
ISSN: 0022-0248
European Materials Research Society (Spring Meeting) <1995, Strasbourg>
Fraunhofer IIS A ( IIS) ()
In-situ-Schichtdickenmessung; in situ thickness measurement; MBE-growth; MBE-Wachstum; Qualitätssicherung; quality control; temperature measurement; Temperaturmessung

For in situ film thickness and temperature control RSPI has been proven to be a standard measurement tool for a wide range of material combinations (Si, GaAs, GaAlAs, GaN, InAs, InP, etc.) and technologies (MBE/CBE, Si-oxidation, RTCVD, leading to increased yield (e. g. from 33 per cent up to nearly 100 per cent for VCSEL manufacturing) and improved reproducibility (typically 0.1 per cent for thickness and 0.3 per cent for temperature). This paper discusses the influence of MBE wafer rotation on the RSPI measurement and efforts to increase signal quality. Thin Si8OGe20 film on Si have been grown in an RTCVID system, monitored by an 450 nm RSPI thickness measurement.