Options
1991
Conference Paper
Titel
In-situ measurement of planarization of wafer topography
Abstract
An optical method is described that allows the nondestroying measurement of the quality of planarization used in the fabrication of integrated circuits. A HeNe-laser beam is directed onto the surface of the structured silicon wafer and reflected. The intensity of the diffuse scattered light is used to determine the flatness of the wafer surface.