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In-situ film thickness measurements by using pyrometric interferometry

: Boebel, F.G.; Bonnes, U.; Frohmader, K.P.

Prough, S.D. ; Institute of Electrical and Electronics Engineers -IEEE-:
Eleventh IEEE/CHMT International Electronics Manufacturing Technology Symposium 1991
Piscataway, NJ: IEEE, 1991
ISBN: 0-7803-0156-0
International Electronics Manufacturing Technology Symposium (IEMT) <11, 1991, San Francisco/Calif.>
Fraunhofer IIS A ( IIS) ()
Halbleiterfertigung; in situ process control; in situ Prozeßkontrolle; measurement of film thickness; pyrometric interferometry; pyrometrische Interferometrie; Schichtdickenmessung; semiconductor measurement system; temperature measurement; Temperaturmessung

A new optical in-situ method for film thickness measurements - named Pyrometric Interferometry (PI) - is introduced, which is capable of high resolution (0.5 nm), data aquisition during the process (in-situ measurement) and real time data evaluation. It can be used for process controll as well as for on-line quality inspection without time delay or additional handling mechanisms and is suitable for monitoring single films as well as multilayer structures. PI is insensitive to mechanical vibrations and hostile environments like high temperature and/or chemical reactive gases. Its technical realization is achieved by using standard components, thus providing a very competitive cost- effectiveness ratio. The in-situ PI film thickness measurements of a SiO2 layer growing on a silicon substrate by thermal oxidation are presented, as well as a SiO2/Si coating by chemical vapor deposition. The potential technical impact of PI on automation, reliability and long term performance of manufacturi ng operations is also discussed.