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In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometry

: Böbel, F.G.; Möller, H.; Hertel, B.; Grothe, H.; Schraud, G.; Schröder, S.; Chow, P.


Journal of Crystal Growth 150 (1995), S.54-61
ISSN: 0022-0248
Fraunhofer IIS A ( IIS) ()
film thickness; Halbleiterfertigungsgerät; in situ process controll; in situ-Prozeßkontrolle; measurement; pyrometric interferometry; pyrometrische Interferometrie; Schichtdickenmessung; semiconductor measurement system; temperature measurement; Temperaturmessung

In this paper we present an overview as well as latest results of applying pyrometric interferometry (PI) to in situ film thickness and temperature measurements in molecular beam epitaxy facilities. We treat two PI configurations (PI and reflection supported PI) and discuss their different advantages and shortcomings. Physical basics, experimental set-ups as well as evaluation procedures are outlined. Special emphasis is given on long term experience and III-V MBE and the impact of PI on yield, reproducibility, number of required calibration runs and device performance.