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Improvement of SIMOX buried oxide breakdown voltage by multiple step and multiple energy implantation

: Gassel, H.; Vogt, H.

Electrochemical Society -ECS-:
Sixth International Symposium on Silicon-on-insulator technology and devices '94. Proceedings
Pennington/N.J., 1994 (Electrochemical Society. Proceedings 94-11)
ISBN: 1-56677-043-2
International Symposium on Silicon-on-Insulator Technology and Devices <6, 1993, San Francisco/Calif.>
Fraunhofer IMS ()
Siliciumdioxid; Siliciumoxid; silicon dioxide; silicon-on-insulator; silicon oxide; SIMOX; SOI-Technik

The breakdown voltage of the buried oxide (BOX) is a key parameter in SIMOX technology. Five different groups of samples have been produced: single annealed wafers at 200 keV and 180 keV, triple annealed wafers at 200 keV, energy shifted single annealed (160 keV to 200 keV) and energy shifted triple annealed. Breakdown voltage of about 190 V were obtained for the single energy single annealed samples, but higher values of approx. 290 V were measured for all three non standard devices. Common feature of all non standard production modes is a shift of the implantation profile towards the substrate after each production step. It is concluded from TEM analysis that implantation profile shift avoids formation of silicon inclusions near the BOX/substrate interface. Therefore increase of breakdown voltages in non standard samples is addressed to improved morphology. As the UBD improvement shows minor dependence on the specific process conditions this approach appears to be very manufacturable