Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Improved delineation technique for two dimensional dopant profiling

: Gong, L.; Petersen, S.; Frey, L.; Ryssel, H.


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 96 (1995), S.133-138
ISSN: 0168-583X
Fraunhofer IIS B ( IISB) ()
chemical delineation; dopant concentration; eqiconcentration lines; two dimensional dopant profiling

A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching due to drastic changes of the etching rate as function of dopant concentration has been studied. Formation of pn-junction, degeneration of the semiconductor, and formation of recombination centers are discussed as possible cause of these changes. In addition, a new etching procedure for delineation of equi-concentration lines in n-doped regions was successfully.