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Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers

Impedanz, Modulationsantwort und Ersatzschaltbild von ultraschnellen InGaAs/GaAs-MQW-Lasern
 

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Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting '93. Proceedings
New York/N.Y., 1993 (IEDM Technical Digest)
ISBN: 0-7803-1450-6
S.601-604 : Abb.,Lit.
International Electron Devices Meeting <1993, Washington/D.C.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
impedance; Impedanz; modulation response; Modulationsantwort; p-doping; p-Dotierung; relative intensity noise; relatives Intensitätsrauschen; ultra-high-speed laser; ultraschneller Laser

Abstract
We present the first direct on-wafer measurements of the electrical impedance of p-doped In0.35Ga0.65As/GaAs MQW lasers, and use the results to derive an equivalent circuit model for frequencies up to 50 GHz. In order to explain the impedance characteristics, the effects, the effects of carrier capture into the QWs as well as the space-charge capacitance of the diode junction must be taken into account. Utilizing this equivalent circuit in conjunction with intrinsic laser parameters derived from RIN measurements, the electrical modulation response curves can be fitted accurately up to 40 GHz.

: http://publica.fraunhofer.de/dokumente/PX-17896.html