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Hydrogen passivation of shallow impurities in GaAs/AlGaAs quantum wells.

Wasserstoffpassivierung von flachen Defekten in GaAs/AlGaAs Quantentöpfen
: Harris, C.I.; Stutzmann, M.; Köhler, K.


Materials Science Forum (1993), Nr.117/118, S.339-344
ISSN: 0255-5476
Fraunhofer IAF ()
localization; passivation; photoluminescence; Photolumineszenz; Quantentopf; quantum wells

The use of hydrogen to passivate defect states in semiconductors has received considerable recent attention. We report in this work on the passivation of Si shallow donors in GaAs/AlGaAs single quantum well structures using a dc plasma technique. We show that passivation has a dramatic effect on the internal potential of the quantum well structure resulting in strong shifts in the transition energy for states within the well. Although dopant impurities are clearly passivated by this process, there is no evidence to suggest that interface localization is reduced. For high initial doping densities the process of passivation is in fact shown to enhance localization, such that free excition transitions are significantly broadened.