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Title
Hochohmiges Siliziumkarbid und Verfahren zu dessen Herstellung
Date Issued
1999
Author(s)
Niemann, E.
Schneider, J.
Mueller, Harald D.
Maier, K.
Patent No
1993-4325804
Abstract
The object of the invention is a process for the production of high-impendance SiC made of a low-impedance starting material. Said invention consists in overcompensating the flat donor level or a predominantly nitrogen impurity by adding a trivalent element, by integrating this dopant at a specific concentration in the SiC which changes the conductor type from n to p, and by adding a transition metal, which has donor levels in SiC at about the middle of the band gap, and this compensates in turn for the excess acceptor levels in order to achieve a high specific resistance.
Language
de
Patenprio
DE 1993-4325804 A: 19930731