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High resolution EL2 and resistivity topography of Si GaAs wafers

Hochauflösende EL2- und Widerstandstopographie von Si GaAs Scheiben
: Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.

Lilienthal-Weber, Z.; Miner, C.J. ; Institute of Electrical and Electronics Engineers -IEEE-; Lawrence Berkeley National Laboratory:
Semiconducting and insulating materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials SIMC-X
Piscataway, NJ: IEEE, 1999
ISBN: 0-7803-4354-9
ISBN: 0-7803-4355-7
ISBN: 0-7803-4356-5
Conference on Semiconducting and Insulating Materials (SIMC) <10, 1999, Berkeley/Calif.>
Fraunhofer IAF ()
EL2; GaAs; photoluminescence; Photolumineszenz; resistivity; substrate; topography; Widerstand

The mesoscopic inhomogencity of LEC grown semi-insulating (SI) GaAs wafers has been investigated with EL20 absorption topography (EAT), photoluminescence topography (PLT), point contact topography (PCT) and contactless resistivity mapping (COREMA). Significant progress with respect to sensitivity of EAT and lateral resolution of COREMA has been achieved. High resolution topograms of wafers cut from ingots subject to standard and modified annealing procedures are presented. Direct comparison of EL2 and resistivity topograms reveals significant differences in the mesoscopic contrast and a contrast reversal for modified annealing. These observations can be explained very satisfactorily by assuming mesoscopic inhomogeneity of the intrinsic acceptor concentration which is modified during annealing. A model involving generation of Ga vacancies by dissolution of As(Ga) antisites and gettering of the interstitial As at precipitates is presented and discussed.