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High resolution EBIC imaging of shallow p-n junctions using FEG-SEM

: Wellner, A.; Katzer, D.; Blumtritt, H.; Röder, A.

Donecker, J.; Rechenberg, I.:
Defect recognition and image processing in semiconductors 1997. Proceedings
Philadelphia: IOP Publishing, 1998 (Institute of Physics - Conference Series 160)
ISBN: 0-7503-0500-2
S.71-74 : Ill., Lit.
International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP) <7, 1997, Templin>
Fraunhofer IWM ()

For investigation of doped areas, p-n junctions and defects in conventional SEM the EBIC (Electron Beam Induced Current) imaging technique is widely applied with lateral resolutions down to the sub mu m range. In this contribution it is demonstrated that using very low beam energies in a FEG-SEM resolutions better than 0,2 mu m can be obtained. Regarding the optimisation of the voltage and the beam diameter best resolution was achieved between 1 and 1,5 kV. The utilisation of lowvoltage EBIC additionally proved to be more advantageous in determining the absolute dimensions of doped regions compared with other techniques.