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High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.

Hochwertige, MOCVD-gewachsene AlGaInP/GaAs-MODFET-Strukturen - Ein Beispiel eines bezüglich der Grenzflächenqualität erfolgreich konzipierten Heteroüberganges

Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.:
Formation of Semiconductor Interfaces. Proceedings of the 4th International Conference
Singapore: World Scientific, 1994
S.744-746 : Abb.,Tab.,Lit.
Formation of Semiconductor Interfaces <4, 1993, Jülich>
Fraunhofer IAF ()
chemical vapour deposition; Hall-Eigenschaft; Hall property; MOCVD; Phosphid-Arsenid-Grenzfläche; phosphide-arsenide interface; photoluminescence; Photolumineszenz

AlGaInP/GaAs heterostructures have been studied to exploit their potential for MODFET applications. In order to circumvent problems related to the complex nature of real MOCVD-grown arsenide/phosphide interfaces a 1.8 nm thin AlGaAs layer has been inserted between the channel and barrier layers. This interlayer provides an abrupt interface between channel and harrier while pushing away the compositionally graded arsenide/phosphide transition layer from the critical channel interface. Hall measurements on modulation-doped AlGaInP/GaInAs/GaAs MODFET structures utilizing this interface design yield electron sheet densities up to 2.75 x 10 high 12 cm high -2. The electron mobilities measured at both room temperature and 77 K equal or exceed the best values obtained for AlGaAs/GaInAs/GaAs MODFET structures.