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High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy

Trapezförmige, MBE gewachsene Hochleistungslaserdioden mit kohlenstoffdotierter Mantelschicht

: Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.

	Woo, J.C.; Park, Y.S.: Compound Semiconductors 1995. Proceedings of the Twenty-Second International Symposium on Compound Semiconductors Bristol: IOP Publishing, 1996 (Institute of Physics - Conference Series 145) ISBN: 0-7503-0342-5 S.995-998
	International Symposium on Compound Semiconductors <22, 1995, Cheju Island>

	Englisch
	Konferenzbeitrag
	Fraunhofer IAF ()
	carbon doping; high power laser diode; Hochleistungslaserdiode; Kohlenstoffdotierung; MBE

Abstract
High power InGaAs/GaAs tapered laser oscillators with a new type of carbon doping in the p-cladding layers grown by MBE are presented. In these devices carbon partially replaces the common beryllium p-dopant near the core region. SIMS depth profiles show, that the carbon doped layer serves as an efficient diffusion barrier for the beryllium in the p-cladding and contact layers. Thus, the previously observed severe beryllium redistribution from the p-cladding layer into the core region of the laser diodes is completely suppressed. In single quantum well (WQW) lasers this doping profile results in low internal losses of 2.6 cm(exp -1). Tapered laser oscillators show output powers as large as 7.2 watts an a maximum power conversion efficiency of 34 %.

: http://publica.fraunhofer.de/dokumente/PX-17108.html