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High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

30 Gb/s Modulator Treiber ICs in AlGaAs/GaAs-Technologie


IEEE Electron Devices Society; IEEE Microwave Theory and Techniques Society:
19th GaAs IC Symposium 1997. Technical digest
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-4083-3
GaAs IC Symposium <19, 1997, Anaheim/Calif.>
Fraunhofer IAF ()
HEMT; modulator driver; Modulator-Treiber; monolithic integrated circuit; monolithisch integrierte Schaltung

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 mu m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz integral of T. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V(P-P) at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V(P-P) at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.