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High gain operational amplifier implemented in 0.5 µm GaAs E/D HEMT technology

 
: Feng, S.; Seitz, D.; Sauerer, J.

:

Electronics Letters 30 (1994), Nr.8, S.636-637
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IIS A ( IIS) ()
HEMT; high electron mobility transistor; operational amplifier; Operationsverstärker

Abstract
A high voltage gain operational amplifier implemented in 0.5 µm GaAs E/D HEMT technology is presented. The amplifier principally consists of a differential input stage and a high gain cascode stage which was developed by Toumazou and Haigh. On-wafer measurement verifies that the amplifier achieves an open-loop voltage gain of 73 dB and a unity-gain bandwidth of 1.78 GHz.

: http://publica.fraunhofer.de/dokumente/PX-17080.html