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High efficiency isothermal LPE grown GaAs solar cells with high fill factor

: Lutz, F.; Nguyen, T.; Wettling, W.; Bett, A.W.

European Commission:
Ninth E.C. Photovoltaic Solar Energy Conference '89. Proceedings of the International Conference
Dordrecht: Kluwer Academic Publishers Group, 1989
ISBN: 0-7923-0497-7
Photovoltaic Solar Energy Conference <9, 1989, Freiburg>
Fraunhofer ISE ()

GaAs solar cell with Ga sub 0.1 Al sub 0.9 As window layers were produced by isothermal liquid phase epitaxy (LPE). The p-doped emitter was directly diffused into the n-substrate without an intermediate buffer layer. In spite of this simple structure of the cells a high fill factor of 85 percent and a high open voltage of 1.01 V could be achieved which resulted in high efficiencies of 19 to 20.6 percent for 1 x 1 square centimeter cells. The homogeneity of the epitaxial layers and of the antireflection coating could be monitored by mapping techniques. The cell parameters were determined by 1 sun AM 1.5 simulator and dark current measurements.