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High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers

Hocheffiziente und hochbrillante 980-nm AlGaAs/InGaAs-Diodenlaser
: Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G.

Conference on Novel Lasers and Devices-Basic Aspects 1999. Proceedings
S.l., 1999
Conference on Novel Lasers and Devices-Basic Aspects <1999, Munich>
Fraunhofer IAF ()
diode laser; Diodenlaser; GaInAs; Halbleiterlaser; high brightness; high efficiency; hohe Brillianz; hohe Effizienz; semiconductor laser

High-brightness and high-efficiency laser bars have been fabricated in the AlGaAs/InGaAs material system. The electro-optical conversion efficiency is close to 60 % at 60 W optical power for bars with broad area lasers. Laser bars comprising 25 tapered emitters have been fabricated as well. Their total output power is higher than 25 W and the average beam quality factor M2 of each individual emitter is 2.18 at 10 W total power.