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Heteroepitaxial Pb1-xSnxSe on Si infrared sensor array with 12 mym cutoff wavelength.

Heteroepitaktische Pb1-xSnxSe-Infrarot-Sensor Zeile auf Si mit 12 mym Grenzwellenlänge
 

Applied Physics Letters 55 (1989), Nr.10, S.969-971 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Englisch
Zeitschriftenaufsatz
Fraunhofer IPM ()
Heteroepitaxie; heteroepitaxy; Infrared detector; Infrarotdetektor; IV-VI-Halbleiter; IV-VI semiconductor; MBE

Abstract
An array of photovoltaic infrared sensors with 12 mym cutoff wavelength has been fabricated for the first time in a narrow-gap semiconductor layer grown heteroepitaxially on Si. Heteroepitaxy is achieved using intermediate stacked epitaxial CaF2-SrF2-BaF2 buffer layers to overcome the large lattice as well as thermal expansion mismatch between narrow-gap PbSnSe and Si. The IR sensors exhibit resistance-area products up to 0.3 (ohm cm square) at 77 K. This corresponds to sensitivities which are above the 300 K background noise limit and only 2 - 5 times lower than those of state of the art HgCdTe sensors on CdZnTe substrates with the same cutoff wavelengths.

: http://publica.fraunhofer.de/dokumente/PX-16984.html