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Heteroepitaktisch abgeschiedenes Diamant

 

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Frontpage ()

DE 1992-4233085 A: 19921001
EP 1993-921790 A: 19931001
WO 1993-DE936 W: 19931001
EP 663023 B1: 19970806
DE 4233085 C2: 19961010
C30B0025
Deutsch
Patent, Elektronische Publikation
Fraunhofer IST ()

Abstract
The invention relates to a process for the manufacturer of hetero-epitaxial diamond layers on Si substrates deposited by means of CVD and conventional process gases, whereby a) a negative bias voltage is applied to the Si substrate during the nucleation phase and b) diamond deposition takes place after the nucleation phase.

: http://publica.fraunhofer.de/dokumente/PX-16978.html