English
Deutsch
Log In
Password Login
or
Log in with Fraunhofer Smartcard
Research Outputs
Projects
Researchers
Institutes
Statistics
Fraunhofer-Gesellschaft
Home
Fraunhofer-Gesellschaft
Artikel
Growth rate and characterization of silicon oxide films grown in N2O atmosphere in a rapid thermal processor
Details
Full
Export
Statistics
Options
1994
Journal Article
Titel
Growth rate and characterization of silicon oxide films grown in N2O atmosphere in a rapid thermal processor
Author(s)
Lange, P.
Bernt, H.
Hartmannsgruber, E.
Naumann, F.
Zeitschrift
Journal of the Electrochemical Society
DOI
10.1149/1.2054695
Language
English
google-scholar
View Details
Fraunhofer-Institut für Siliziumtechnologie ISIT