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Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP

Wachstum von Al0.48In0.52As/Ga0.47In0.53As Heterostrukturen gitterrelaxiert auf GaAs und gitterangepaßt auf InP

IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
Fraunhofer IAF ()
Hall effect; Hall Effekt; HEMT; MBE; photoluminescence; Photolumineszenz

Ternary Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelenghts between 1.3 and 1.55 microm. Interesting as well are the high electron mobility and concentration achieved in doped Al0.48In0.52As/Ga0.47In0.53As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al0.48In0.52As/Ga0.47In0.53As heterostructures with low cost and availability of large GaAs substrates.