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The growth characteristics of (001) oriented diamond layers on (111) diamond face via bias-assisted chemical vapour deposition

: Zhang, W.J.; Jiang, X.


Applied Physics Letters 68 (1996), Nr.16, S.2195-2197
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer IST ()

A new phenomenon of diamond growth was observed. (001) oriented diamond layers can be grown on a (111) diamond face in a bias‐assisted chemical vapor deposition process. The growth characteristics were investigated by means of scanning electron microscopy and Raman spectroscopy. It was found that, due to the ion bombardment, the epitaxial growth of the (111) diamond face was interrupted and a secondary nucleation occurred. This ion‐bombardment‐induced secondary nucleation leads to the growth of a top layer with a nonparallel orientation relationship with the substrate.