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Global standardization of compound semiconductor test methods

Die globale Standardisierung von Messverfahren für Verbindungshalbleiter
 
: Jantz, W.

Donecker, J.; Rechenberg, I.:
Defect recognition and image processing in semiconductors 1997. Proceedings
Philadelphia: IOP Publishing, 1998 (Institute of Physics - Conference Series 160)
ISBN: 0-7503-0500-2
S.245-254 : Ill., Lit.
International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP) <7, 1997, Templin>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
compound semiconductor; material specification; Material-Spezifikation; resistivity mapping; Standardisierung; standartization; Verbindungshalbleiter; Widerstands-Topographie

Abstract
The present international status of standardization for compound semiconductor materials is reviewed. A limited number of standard specifications and standard test methods have been issued or are under preparation. Two of them, standardizing the measurement of carbon in GaAs and the resistivity of semi-insulating material, are discussed in detail. The results of an inquiry on the demand for new standards are reported and a general strategy to improve international cooperation with respect to the elaboration and general acceptance of standards is outlined.

: http://publica.fraunhofer.de/dokumente/PX-16226.html