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Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.

Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mym
 

Univ. Degli Studi di Parma:
WOCSDICE 93. 17th European Workshop on Compound Semiconductor Devices and Integrated Circuits
Parma, 1993
S.31-32 : Abb.,Lit.
European Workshop on Compound Semiconductor Devices and Integrated Circuits <17, 1993, Parma>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
Ausgangsleitwertanalyse; HEMT; MODFET; output conductance analysis; transistor scaling; Transistorskalierung

Abstract
A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance on GaAs.

: http://publica.fraunhofer.de/dokumente/PX-15778.html