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1999
Journal Article
Titel
GaAs/AlGaAs-Quantenfilm-Photodetektoren für Kameras im 8...12 Mikrometer Bereich
Alternative
GaAs/AlGaAs quantumwell photodetectors for IR cameras in the 8...12 mu m range
Abstract
Intersubband transitions in GaAs/AlGaAs heterostructures are increasingly used in cameras for the thermal infrared regime. An excellent thermal resolution has been achieved in particular in the 8 ... 12 mu m spectral regime. We report on the basic physics of these quantum well infrared photodetectors (QWIPs) and on the properties of cameras based on these devices in comparison to other detector materials. Finally we address a few applications for which QWIPs are the material of choice.
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