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GaAs HEMT ICs for 40 Gbit/s data transmission systems

GaAs-HEMT-ICs für 40 Gbit/s Datenübertragungssysteme

EMAC '97. European Microelectronics Application Conference. Proceedings. Academic Sessions
Barcelona, 1997
S.85-88 : Ill.
European Microelectronics Application Conference (EMAC) <1997, Barcelona>
Fraunhofer IAF ()
high speed data transmission; Hochgeschwindigkeitsdatenübertragung

Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized different ICs for optoelectronic data transmission systems. In this paper we describe several chips for a 40 Gbit/s system. The results presented here have been obtained on wafer with a 50 Omega coplanar test system.