Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m

GaAs-basierte pin-HEMT Photoempfänger für optische Mikrowellen und Millimeterwellenübertragung
 

International Topical Meeting on Microwave Photonics 1998. Postdeadline papers
Princeton, NJ, 1998
2 S. : Ill., Lit.
International Topical Meeing on Microwave Photonics (MWP) <1998, Princeton/NJ>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
40 Gbit/s Empfänger; 40 Gbit/s receiver; narrowband optical receiver; optical microwave transmission; optische Mikrowellenübertragung; optischer Schmalbandempfänger

Abstract
Pin-photodiodes for a wavelength of 1.55 mu m were monolithically integrated on GaAs with 0.15 mu m gate-length pseudomorphic HEMTs using a linear graded metamorphic InGaAlAs buffer. We designed and manufactured narrowband (10 GHz and 42 GHz) and broadband (40 Gbit/s) photoreceivers using this technology.

: http://publica.fraunhofer.de/dokumente/PX-15635.html