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G-factor and effective mass anisotropies in pseudomorphic strained layers.

Anisotropie der g-Faktoren und effektiven Massen in pseudomorphen verspannten Schichten
 
: Hendorfer, G.; Schneider, J.

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Semiconductor Science and Technology 6 (1991), S.595-601 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
effective mass; effektive Masse; elastic strain; elastische Verspannung; g-factor; Gitterfehlanpassung; III-V Halbleiter; III-V semiconductors; lattice mismatch

Abstract
We present an evaluation for the calculation of the effective g-factor and the effective mass of conduction band electrons in pseudomorphic strained layers. We apply this evaluation to some important heterostructure systems and show that the effective mass is mainly isotropically shifted wheras the g-factor exhibits anisotropic splitting. We show that these effects, being attributed to the internal strains induced by lattice mismatch, may be used to characterize heterostructures.

: http://publica.fraunhofer.de/dokumente/PX-15633.html