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A fully CMOS-compatible infrared sensor fabricated on SIMOX substrates

Siehe auch: Sensors and Actuators B
: Müller, M.; Gottfried-Gottfried, Ralf; Kück, Heinz; Mokwa, Wilfried


Sensors and Actuators. A 42 (1994), Nr.1-3, S.538-541
ISSN: 0924-4247
Eurosensors <7, 1993, Budapest>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Infrarotdetektor; Meßaufnehmer; Mikrosystemtechnik; SIMOX; Thermosäule

We report on the use of SIMOX substrates for fabrication or IR radiation thermopiles by CMOS technology. SIMOX technology enables the fabrication of single-crystal leads on thin silicon or silicon oxide membranes. Two p-type silicon/aluminium thermopiles on different membranes are presented. A thermopile with a 4 mym thick, epitaxially grown silicon membrane has a responsivity of 18 V/W and a time constant of 3 ms. Using a 2.5 mym thick silicon oxide membrane, a responsivity of 150 V/W and a time constant of 25 ms are achieved. In addition, the fabrication and properties of an IR absorber made in CMOS technology are presented.