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A fully CMOS compatible infrared sensor fabricated on SIMOX-substrates


Giber, J.; Göpel, W.; Holmes, I.L.; Horvai, G.; Meixner, H.; Timar-Horvath, V. ; Budapesti Müszaki Egyetem, Eötvös Lorand Fizikai Tarsulat:
Eurosensors VII. Book of Abstracts
Budapest, 1993
Eurosensors <7, 1993, Budapest>
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Infrarotdetektor; Meßaufnehmer; Mikrosystemtechnik; SIMOX; Thermosäule

We report on the use of SIMOX substrates for fabrication or IR radiation thermopiles by CMOS technology. SIMOX technology enables the fabrication of single-crystal leads on thin silicon or silicon oxide membranes. Two p-type silicon/aluminium thermopiles on different membranes are presented. A thermopile with a 4 fm thick, epitaxially grown silicon membrane has a responsivity of 18 V/W and a time constant of 3 ms. Using a 2.5 fm thick silicon oxide membrane, a responsivity of 150 V/W and a time constant of 25 ms are achieved. In addition, the fabrication and properties of an IR absorber made in CMOS technology are presented.