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Fast CMOS imaging with high dynamic range


Institute of Electrical and Electronics Engineers -IEEE-:
Charge-coupled devices & advanced image sensors 1997. Workshop proceedings
Piscataway, NJ: IEEE, 1997
Workshop Charge-coupled Devices & Advanced Image Sensors <1997, Bruges>
Fraunhofer IMS ()
Bildwandler; CMOS-Bildwandler; CMOS imager; Kamera; photodiode

In this communication we report on our experience in 2-D imaging based on standard CMOS technology that features high speed, high dynamic range, and random pixel access. We have designed and integrated a 128 x 128 pixel imager with hexagonal structure in a standard 1mu m CMOS process. The pixels measure 29.1mu m x 25.2mu m and have a fill factor of 40 per cent. The optical dynamic range is 140dB with a signal-to-noise ratio of 56dB.