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Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures

Herstellung von Hochgeschwindigkeits-MMICs und digitalen ICs unter Verwendung der T-Gate-Technologie auf pseudomorphen HEMT-Strukturen

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Fraunhofer IAF ()
e-beam lithography; GaAs; millimeter wave integrated circuit; Millimeterwellen-Schaltkreis; pseudomorphe HEMTs; T-gate

A technology for pseudomorphic MODFETs with 160 nm T-gates was developed and combined with a monolithic microwave integrated circuit (MMIC) fabrication process. The realized MODFETs demonstrate transit frequencies of 145 GHz at drain currents of 260 mA and drain bias of 1.2 V. With these MODFETs we were able to fabricate 3-stage 76 GHz amplifiers with a gain of 21 dB, and 5-75 GHz broadband travelling-wave amplifiers with a gain of 9.3 dB and a noise figure less than 4.0 dB in coplanar waveguide (CPW) technology, and dynamic frequency dividers operating from 28 to 51 GHz.