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Fabrication of halfmicron MOSFETs by means of X-ray lithography

 
: Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P.

Microelectronic engineering 6 (1987), Nr.1-4, S.215-220
ISSN: 0167-9317
Englisch
Zeitschriftenaufsatz
Fraunhofer ISIT ()
lithography; mask technology; Maskentechnologie; MOSFET; Röntgenlithographie; x-ray

Abstract
MOSFETs with effective channel lengths down to 0.3 mym have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. (IMT)

: http://publica.fraunhofer.de/dokumente/PX-13699.html